Infineon BSM300GA120DN2FS_E3256 Igbt Modules


Infineon BSM300GA120DN2FS_E3256 Igbt   Modules Image

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Manufacturer:InfineonProduct Category:IGBT ModulesRoHS: Details Product:IGBT Silicon ModulesConfiguration:SingleCollector- Emitter Voltage VCEO Max:1200 VCollector-Emitter Saturation Voltage:2.5 VContinuous Collector Current at 25 C:430 AGate-Emitter Leakage Current:0.32 uAPd - Power Dissipation:2.5 kWPackage/Case:62 mmMinimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 150 CTechnology:Si Brand:Infineon Technologies Mounting Style:Chassis Mount Maximum Gate Emitter Voltage:20 V Product Type:IGBT Modules Factory Pack Quantity:1 Subcategory:IGBTs