Infineon BSM300GA120DN2FS_E3256 Igbt Modules

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Technical Description

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS: Details Product:IGBT Silicon Modules
Configuration:Single
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.5 V
Continuous Collector Current at 25 C:430 A
Gate-Emitter Leakage Current:0.32 uA
Pd - Power Dissipation:2.5 kWPackage/Case:62 mm
Minimum Operating Temperature:- 40 C
Maximum Operating Temperature:+ 150 C
Technology:Si Brand:Infineon Technologies Mounting Style:Chassis Mount Maximum Gate Emitter Voltage:20 V Product Type:IGBT Modules Factory Pack Quantity:1 Subcategory:IGBTs

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Infineon BSM300GA120DN2FS_E3256 Igbt Modules

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