Infineon FF1200R17KE3 Igbt Unit

Name: Infineon FF1200R17KE3 Igbt Unit
Brand: Infineon
SKU: FF1200R17KE3 Igbt
Availability: InStock

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Technical Description

anufacturer:Infineon
Product Category:IGBT Modules
RoHS:N Configuration:Dual
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:2 V
Continuous Collector Current at 25 C:1600 A
Gate-Emitter Leakage Current:400 nA
Pd - Power Dissipation:5.95 kW
Package/Case:IHM130-10
Minimum Operating Temperature:- 40 C
Maximum Operating Temperature:+ 125 C
Packaging:Tray
Height:38 mm Length:140 mm Width:130 mm Brand:Infineon Technologies Mounting Style:SMD/SMT Maximum Gate Emitter Voltage:20 V Product Type:IGBT Modules Factory Pack Quantity:2 Subcategory:IGBTs Part # Aliases:FF1200R17KE3NOSA1 SP000100586 FF1200R17KE3NOSA1

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Infineon FF1200R17KE3 Igbt Unit

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