Infineon BSM150GB120DN2F Module

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Technical Description

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS: Details Product:IGBT Silicon Modules
Configuration:Half Bridge
Collector- Emitter Voltage VCEO Max:1200 VCollector-Emitter Saturation Voltage:2.5 VContinuous Collector Current at 25 C:210 A
Gate-Emitter Leakage Current:320 nA
Pd - Power Dissipation:1.25 kW
Package/Case:Half Bridge2
Minimum Operating Temperature:- 40 C
Maximum Operating Temperature:+ 150 C
Packaging:Tray
Height:30 mm Length:106.4 mm Technology:Si Width:61.4 mm Brand:Infineon Technologies Mounting Style:Chassis Mount Maximum Gate Emitter Voltage:20 V Product Type:IGBT Modules Factory Pack Quantity:10 Subcategory:IGBTs Part # Aliases:BSM150GB120DN2HOSA1 SP000095942 BSM150GB120DN2HOSA1

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Infineon BSM150GB120DN2F Module

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